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ORC Steps up Dilute Nitride Activity
Two new projects and a COST Action which kicked off during summer 2009
have boosted dilute nitride research at ORC.
The ORC-coordinated project ‘SOLAR III-V’
targets innovative functional
semiconductors and nanoscale epi-structures with the goal of producing
high efficiency, multi-junction III-V compound semiconductor solar
cells. The project will make use of a recently installed 14-port
MBE reactor capable of combining dilute nitride and antimonide crystal
growth. Most of the research activity will focus on improving the
material quality of dilute-nitride heterostructures to enhance the
efficiency of 3-junction and 4-junction tandem solar cells.
The TEKES-funded project ‘FLIPSOI’,
(Optics integration by flip-chip
bonding on a silicon waveguide platform) will develop dilute nitride
semiconductor optical amplifiers, mode-locked semiconductor lasers, and
modulators for hybrid integration on SOI (silicon on insulator)
platforms. The target applications are mainly in optical
telecommunications and short-range optical interconnections, where the
total data rate per optical module can reach terabits per second.
ORC will also co-ordinate the dilute nitride growth activities within
the framework of COST Action
MP0805, ‘Novel Gain Materials and Devices
Based on III-V-N Compounds’.
For more information, please contact Prof. Mircea Guina, mircea.guina tut.fi.
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